Repurposing Memristive Memories for Physical Layer RF Systems: Opportunities and Challenges

Silicon technology revolutionised electronic systems, with today’s computers integrating billions of transistors in single chipsets. Silicon semiconductors have been a key-enabler in Radio Frequency (RF) systems too, empowering electronic reconfigurability in wireless systems, like radios, RFIDs tags, phased arrays, etc., facilitating smart adaptions catering spectrum requirements.
However, with growing scale of RF and microwave systems, integrating silicon-based devices evolves as main barrier towards large smart RF structures or high production volumes, mainly for low-power and low-cost applications. For example, while RFID labels deliver versatile features (like non-aligned reading, sensing capabilities, rewriteablity, etc.) for identification and tracking, to laser-based barcodes, their cost limits their use to high-value products (e.g., clothing) but prohibitive for disposable/low-value items (e.g., soft-drink bottles).
As a solution to this bottleneck, we are re-purposing ‘memristive memories’ – an emerging memory technology, as an efficient solid-state programmable impedance for physical layer RF systems. This technology, remedies restraints on printed electronics due to short comings of Silicon semiconductor technology, providing solutions compatible with large-scale manufacturing of RF devices, like RFID tags. Featuring benefits including printability, non-volatile behaviour (retaining performance without needing an active energy source), better linearity from ohmic rather than semiconductor channels, reduced production/operational cost, and carbon-footprint. Thus, bridging gaps in printed RF electronics, enabling roll-to-roll manufacturing, relieving power-budgets, facilitating affordable smart-systems, including true passive devices