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In this presentation, we will discuss the methods for the epitaxial growth of InAs quantum dots (QDs) embedded in an InP matrix (see Fig. 1a), tailored to emit single photons in the telecom C-band [1,2]. We further demonstrate the exper-imental realization of a deterministically fabricated single-photon source based on these QDs, operating in the telecom C-band [3] (see Fig. B). We explore strategies for establish-ing a scalable quantum photonics platform leveraging silicon photonics. Specifically, we present results on wafer bonding [4] and transfer printing of QD-integrated photonic cavities (Fig. 1c). Lastly, we discuss the direct selective epitaxy of InP-based heterostructures on silicon [5], providing an anal-ysis of the optical and morphological properties of the result-ing structures and discussing the challenges and future pro-spects of this approach.
References
[1] Y. Berdnikov et al,, Sci Rep 14, 23697 (2024)
[2] P. Holewa, et al, Nanophotonics. 11, 8, p. 1515–1526 (2022)
[3] P. Holewa, et al, Nat Commun 15, 3358 (2024)
[4] M. Burakowski et al, Opt Express. 32(7),10874-10886 (2024)
[5] A. Nanwani et al, Adv. Optical Mater. , 13, 2403419 (2025)