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Power amplifiers are widely used in communications, actually, they become really important in order to achieve desirable power levels in the receiver chain. Working with active devices makes the design process difficult in some cases. This talk is intended to give the basic concepts on the design and manufacturing process of a power amplifier using a GaN HEMT power transistor, which has become more popular in recent years due to its good characteristics such as high efficiency, high gain, great bandwidth and low power consumption.
Bio: Pascual D. Hilario-Re was born in Murcia, Spain, in 1990. He received the B.Eng. degree in telecommunications engineering with specialization in telematics in 2012, and the M.Sc. degree in telecommunications engineering in 2015, both from Universidad Politécnica de Cartagena (UPCT). He is currently working towards the Ph.D. degree at Heriot-Watt University, Edinburgh, U.K. His research interests include analysis and design of power amplifiers, wireless power transfer and retrodirective systems with application on energy harvesting for electronic devices.